e2-2-11:Low cost plasic mold ½Ì±Û¸ðµå ±¤¼¶À¯(SMF-28e) ÇDZ×Å×ÀÏ InGaAs Æ÷Åä´ÙÀÌ¿Àµå (pigtail PD)(0.8 ~1.6 ¥ìm)-0.9mm ÀÚÄÏ 1. Á¦Ç°¼Ò°³
±¤¼¶À¯°¡ µÇ¾î ÀÖ´Â Æ÷Åä ´ÙÀÌ¿Àµå´Â ÀϹÝÀûÀÎ ¸ð´ÏÅ͸µ¿¡ »ç¿ëÇÏ¸ç ¾Æ³ª·Î±× ½ÅÈ£·Î Ãâ·ÂµÈ´Ù.
This power-monitoring photodiode has InGaAs absorption layer to detect long wavelength optical signal.
2. Á¦Ç° ±Ô°Ý
Description
|
Units |
Min. |
Typ. |
Max. |
Notes |
Receive Area Diameter
|
|
|
75 ¥ìm |
- |
|
Responsively
|
mA/mW |
0.6 |
0.8 |
|
@ 1.55¥ìm |
Dark Current
|
¡¡ |
- |
200 pA |
1nA |
¡¡ |
Application Temp.
|
¡É |
0 |
- |
60 |
¡¡ |
Storage Temp.
|
¡É |
-40 |
- |
80 |
|
Reverse Voltage
|
V |
- |
- |
15 |
|
Reverse Current
|
mA |
|
10 |
|
¡¡ |
Forward Current |
mA |
|
10 |
|
|
Detection Wavelength
|
¡¡¥ìm |
0.8 |
- |
1.65 |
|
3. Ư¡
¡ß FEATURES Operation at 0.8 ~1.6 ¥ìm Low dark current High responsivity Linear response Low cost
¡ß APPLICATIONS Laser diode power monitoring Optical power-meter application Tap monitor PD
4. »ó¼¼ »çÁø(µµ¸é)

Standard PD
[¼³¸í]
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- ±¤°ËÃâ±â/±¤¼¾¼ (Photo Sensor)
. ±¤ ¿¡³ÊÁö¸¦ °ËÃâÇÏ¿© Àü±âÀû ½ÅÈ£·Î ¹Ù²Þ
.. ¼ö±¤ ¸éÀûÀ» ÀÛ°ÔÇϰí Àüü Å©±â¸¦ ÃÖ¼ÒÈÇÔ
2. Æ÷Åä´ÙÀÌ¿Àµå Ư¼º Æò°¡
¤· ÀÀ´ä Ư¼º / ÀÀ´äµµ (Responsivity) : ¥ñ
- ÀÔ»ç ±¤·®¿¡ ´ëÇÑ Ãâ·Â Àü·ùÀÇ ºñ [Ampere/Watt]
. ¥ñ = i / P
.. (P: ÀÔ»ç ±¤ Àü·Â [Watt], i: º¯È¯µÈ Ãâ·Â Àü·ù [Ampere])
- ÀǹÌ
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¤· ºÐ±¤ °¨µµ / ½ºÆåÆ®·³ ÀÀ´ä (Spectrum Response)
- ÆÄÀå¿¡ µû¶ó ÀÀ´äµµ°¡ ´Þ¶óÁö¹Ç·Î, ÀÌ¿¡µû¸¥ º¯È Ư¼ºÀ» º¸¿©ÁÖ´Â °î¼±

¤· ÀÀ´ä¼Óµµ / »ó½Â½Ã°£ (Rising time) : tr
- °è´ÜÇü ÆÞ½ºÆÄÇüÀÌ ÃÖÁ¾°ªÀÇ 10%¿¡¼ 90%±îÁö »ó½ÂÇϴµ¥ °É¸®´Â ½Ã°£
¤· ±âŸ ¼º´É Ư¼º ¿ä¼Ò
- ¾ÏÀü·ù
- I-V Ư¼º °î¼± (Àü·ù-Àü¾Ð)
- ¾çÀÚ È¿À²
- °¡ÀåÀÚ¸® È¿°ú
- ÈĹæ¹Ý»ç µî
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